According to "서울경제 (SeDaily)", Samsung Electronics will display the sixth-generation high-bandwidth memory (HBM4) at the "2025 Samsung Tech Fair" to be held at the end of this month, and plans to start mass production at the end of this year.
Compared with the previous generation HBM3e, Samsung once lagged behind SK hynix and Micron in terms of quality and NVIDIA certification speed, and the overall HBM market has long been dominated by SK hynix. The debut of HBM4 is seen as a key step for Samsung to accelerate its catch-up and try to regain the lead with a faster mass production pace and more mature technology.
The industry expects that HBM4 will become the core memory supporting the next generation of AI accelerators and hyperscale data centers. If Samsung can take the lead in making breakthroughs in yield and supply stability, it will be expected to keep pace with SK hynix in the era of generative AI. According to industry observations, HBM4 not only achieves innovation in the number of stacking layers, but also increases the transmission rate to more than 9 Gbps, and the bandwidth is more than 40% higher than HBM3e, showing that Samsung is close to the mature stage of mass production.
As the scale of AI models continues to expand, and the demand for bandwidth and energy efficiency of high-performance computing (HPC) systems continues to rise, the mass production progress of HBM4 will directly affect the layout of major AI chip supply chains such as NVIDIA and AMD. Market analysis points out that if Samsung can start mass production by the end of this year as scheduled, it will help it return to the mainstream AI HBM memory supply camp in 2025 and reverse the market pattern led by SK hynix in recent years.
이달 HBM4 공개…삼성, 세계 최소 2억화소 기술도 선봬